EPC2102

EPC

GAN TRANS SYMMETRICAL HALF BRIDG

Description
GaNFET (Gallium Nitride) 60V 23A 4.4mOhm @ 20A, 5V 2.5V @ 7mA 6.8nC @ 5V 830pF @ 30V - -40°C ~ 150°C (TJ) Surface Mount Die Die

RoHS Compliant

EPC2102 Datasheet

In Stock: 710

Can ship immediately

QTY UNIT PRICE
1:$8.01000
500:$4.92117
1000:$4.44493

Product Specifications

TypeDescription
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Half Bridge)
FET Feature:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:23A
Rds On (Max) @ Id, Vgs:4.4mOhm @ 20A, 5V
Vgs(th) (Max) @ Id:2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs:6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:830pF @ 30V
Power - Max:-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:Die
Supplier Device Package:Die

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