TPS1120DR

Texas Instruments

MOSFET 2P-CH 15V 1.17A 8-SOIC

Description
Logic Level Gate 15V 1.17A 180mOhm @ 1.5A, 10V 1.5V @ 250µA 5.45nC @ 10V - 840mW -40°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC

RoHS Compliant

TPS1120DR Datasheet

In Stock: 2,395

Can ship immediately

QTY UNIT PRICE
1:$2.10000
2500:$0.94167

Product Specifications

TypeDescription
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):15V
Current - Continuous Drain (Id) @ 25°C:1.17A
Rds On (Max) @ Id, Vgs:180mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:840mW
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC

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