TPD3215M

Transphorm

GANFET 2N-CH 600V 70A MODULE

Description
GaNFET (Gallium Nitride) 600V 70A (Tc) 34mOhm @ 30A, 8V - 28nC @ 8V 2260pF @ 100V 470W -40°C ~ 150°C (TJ) Through Hole Module Module

RoHS Compliant

TPD3215M Datasheet

In Stock: 184

Can ship immediately

QTY UNIT PRICE
1:$175.13000
10:$169.08962

Product Specifications

TypeDescription
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:2 N-Channel (Half Bridge)
FET Feature:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):600V
Current - Continuous Drain (Id) @ 25°C:70A (Tc)
Rds On (Max) @ Id, Vgs:34mOhm @ 30A, 8V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:28nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds:2260pF @ 100V
Power - Max:470W
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:Module
Supplier Device Package:Module

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