BSM180D12P3C007

ROHM Semiconductor

SIC POWER MODULE

Description
Silicon Carbide (SiC) 1200V (1.2kV) 180A (Tc) - 5.6V @ 50mA - 900pF @ 10V 880W 175°C (TJ) Surface Mount Module Module

RoHS Compliant

BSM180D12P3C007 Datasheet

In Stock: 180

Can ship immediately

QTY UNIT PRICE
1:$563.26000

Product Specifications

TypeDescription
Series:-
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:5.6V @ 50mA
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:900pF @ 10V
Power - Max:880W
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:Module
Supplier Device Package:Module

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