HUFA76407DK8T

Rochester Electronics

SMALL SIGNAL N-CHANNEL MOSFET

Description
Logic Level Gate 60V - 90mOhm @ 3.8A, 10V 3V @ 250µA 11.2nC @ 10V 330pF @ 25V 2.5W -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC

RoHS Compliant

HUFA76407DK8T Datasheet

In Stock: 21,113

Can ship immediately

QTY UNIT PRICE
1:$0.55000

Product Specifications

TypeDescription
Series:UltraFET™
Package:Bulk
Part Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:-
Rds On (Max) @ Id, Vgs:90mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:330pF @ 25V
Power - Max:2.5W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC

You May Interested

TSM9933DCS RLG
TSM9933DCS RLG
MOSFET 2 P-CH 20V 4.7A 8SOP
FDML7610S
FDML7610S
MOSFET 2N-CH 30V 12A/17A 8MLP
EFC6605R-TR
EFC6605R-TR
MOSFET 2N-CH 6EFCP
FDMC0225
FDMC0225
N-CHANNEL POWER TRENCH MOSFET
EL7222CSZE9044-T7
EL7222CSZE9044-T7
BUFFER/INVERTER BASED MOSFET DRI
FQB12N50TM
FQB12N50TM
TRANS MOSFET N-CH 500V 12.1A 3PI
SIR770DP-T1-GE3
SIR770DP-T1-GE3
MOSFET 2N-CH 30V 8A PPAK SO-8
BLA6H1011-600
BLA6H1011-600
RF PFET, 2-ELEMENT, L BAND, SILI
DMN2029USD-13
DMN2029USD-13
MOSFET 2N-CH 20V 5.8A 8SO
IRFHE4250DTRPBF
IRFHE4250DTRPBF
HEXFET POWER MOSFET
ISL6594ACRZ-TR5212
ISL6594ACRZ-TR5212
HALF BRIDGE BASED MOSFET DRIVER,
MSCC60AM23C4AG
MSCC60AM23C4AG
PM-MOSFET-COOLMOS-SBD-SP4
Top