NDS8961

Rochester Electronics

N-CHANNEL POWER MOSFET

Description
Logic Level Gate 30V 3.1A 100mOhm @ 3.1A, 10V 3V @ 250µA 10nC @ 10V 190pF @ 15V 900mW -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC

RoHS Compliant

NDS8961 Datasheet

In Stock: 728

Can ship immediately

QTY UNIT PRICE
1:$0.47000

Product Specifications

TypeDescription
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:3.1A
Rds On (Max) @ Id, Vgs:100mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:190pF @ 15V
Power - Max:900mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC

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