EPC2104

EPC

GAN TRANS SYMMETRICAL HALF BRIDG

Description
GaNFET (Gallium Nitride) 100V 23A 6.3mOhm @ 20A, 5V 2.5V @ 5.5mA 7nC @ 5V 800pF @ 50V - -40°C ~ 150°C (TJ) Surface Mount Die Die

RoHS Compliant

EPC2104 Datasheet

In Stock: 6,388

Can ship immediately

QTY UNIT PRICE
1:$7.17000
500:$5.06621
1000:$4.57593

Product Specifications

TypeDescription
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Half Bridge)
FET Feature:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25°C:23A
Rds On (Max) @ Id, Vgs:6.3mOhm @ 20A, 5V
Vgs(th) (Max) @ Id:2.5V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs:7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:800pF @ 50V
Power - Max:-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:Die
Supplier Device Package:Die

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