FDD3510H

Sanyo Semiconductor/ON Semiconductor

MOSFET N/P-CH 80V 4.3/2.8A TO252

Description
Logic Level Gate 80V 4.3A, 2.8A 80mOhm @ 4.3A, 10V 4V @ 250µA 18nC @ 10V 800pF @ 40V 1.3W -55°C ~ 150°C (TJ) Surface Mount TO-252-5, DPak (4 Leads + Tab), TO-252AD TO-252-4L

RoHS Compliant

FDD3510H Datasheet

In Stock: 580

Can ship immediately

QTY UNIT PRICE
1:$1.25000
2500:$0.55299
5000:$0.52687

Product Specifications

TypeDescription
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N and P-Channel, Common Drain
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):80V
Current - Continuous Drain (Id) @ 25°C:4.3A, 2.8A
Rds On (Max) @ Id, Vgs:80mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:800pF @ 40V
Power - Max:1.3W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package:TO-252-4L

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