2SK879-GR(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

JFET N-CH 0.1W USM

Description
- - 2.6 mA @ 10 V - 400 mV @ 100 nA 8.2pF @ 10V - 100 mW 125°C (TJ) Surface Mount SC-70, SOT-323 USM

RoHS Compliant

2SK879-GR(TE85L,F) Datasheet

In Stock: 3,190

Can ship immediately

QTY UNIT PRICE
1:$0.44000
3000:$0.14777
6000:$0.13823

Product Specifications

TypeDescription
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Voltage - Breakdown (V(BR)GSS):-
Drain to Source Voltage (Vdss):-
Current - Drain (Idss) @ Vds (Vgs=0):2.6 mA @ 10 V
Current Drain (Id) - Max:-
Voltage - Cutoff (VGS off) @ Id:400 mV @ 100 nA
Input Capacitance (Ciss) (Max) @ Vds:8.2pF @ 10V
Resistance - RDS(On):-
Power - Max:100 mW
Operating Temperature:125°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:USM

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