A2G35S160-01SR3

NXP Semiconductors

AIRFAST RF POWER GAN TRANSISTOR

Description
3.4GHz ~ 3.6GHz 15.7dB 48 V - - 190 mA 51dBm 125 V NI-400S-2S NI-400S-2S

RoHS Compliant

A2G35S160-01SR3 Datasheet

In Stock: 400

Can ship immediately

QTY UNIT PRICE
1:$249.36000
250:$116.37008

Product Specifications

TypeDescription
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:LDMOS
Frequency:3.4GHz ~ 3.6GHz
Gain:15.7dB
Voltage - Test:48 V
Current Rating (Amps):-
Noise Figure:-
Current - Test:190 mA
Power - Output:51dBm
Voltage - Rated:125 V
Package / Case:NI-400S-2S
Supplier Device Package:NI-400S-2S

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