MRF8P20160HSR3

Rochester Electronics

RF 2-ELEMENT, L BAND, N-CHANNEL

Description
1.92GHz 16.5dB 28 V - - 550 mA 37W 65 V NI-780S-4 NI-780S-4

RoHS Compliant

MRF8P20160HSR3 Datasheet

In Stock: 3,126

Can ship immediately

QTY UNIT PRICE
1:$151.94000

Product Specifications

TypeDescription
Series:-
Package:Bulk
Part Status:Active
Transistor Type:LDMOS (Dual)
Frequency:1.92GHz
Gain:16.5dB
Voltage - Test:28 V
Current Rating (Amps):-
Noise Figure:-
Current - Test:550 mA
Power - Output:37W
Voltage - Rated:65 V
Package / Case:NI-780S-4
Supplier Device Package:NI-780S-4

You May Interested

IRF225
IRF225
N-CHANNEL HERMETIC MOS HEXFET
BF861C,215
BF861C,215
JFET N-CH 25V 25MA SOT23
BLC10G20LS-240PWTZ
BLC10G20LS-240PWTZ
RF MOSFET LDMOS 28V SOT1275-3
AFT26H250W03SR6
AFT26H250W03SR6
RF POWER FIELD EFFECT TRANSISTOR
BLF888BS,112
BLF888BS,112
RF MOSFET LDMOS DL 50V SOT539B
MRF8S19260HR6
MRF8S19260HR6
RF 2-ELEMENT, L BAND, N-CHANNEL
2N5246
2N5246
SMALL SIGNAL FET
ON5173118
ON5173118
NOW NEXPERIA ON5173 0, D2PAK
BLF888A,112
BLF888A,112
RF FET LDMOS 110V 21DB SOT539A
BLC9G20LS-470AVTZ
BLC9G20LS-470AVTZ
RF FET LDMOS 65V 15.7DB SOT12583
BLF978PU
BLF978PU
BLF978P/SOT539/TRAY
NE3513M04-T2B-A
NE3513M04-T2B-A
SMALL SIGNAL N-CHANNEL MOSFET
Top