UJ3D06512TS

UnitedSiC

650V 12A SIC SCHOTTKY DIODE G3,

Description
650 V 12A (DC) 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 392pF @ 1V, 1MHz Through Hole TO-220-2 TO-220-2 -55°C ~ 175°C

RoHS Compliant

UJ3D06512TS Datasheet

In Stock: 2,920

Can ship immediately

QTY UNIT PRICE
1:$5.25000

Product Specifications

TypeDescription
Series:-
Package:Tube
Part Status:Active
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):12A (DC)
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 12 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:80 µA @ 650 V
Capacitance @ Vr, F:392pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2
Operating Temperature - Junction:-55°C ~ 175°C

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