GB01SLT12-252

GeneSiC Semiconductor

DIODE SILICON 1.2KV 1A TO252

Description
1200 V 1A 1.8 V @ 1 A No Recovery Time > 500mA (Io) 0 ns 2 µA @ 1200 V 69pF @ 1V, 1MHz Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 -55°C ~ 175°C

RoHS Compliant

GB01SLT12-252 Datasheet

In Stock: 11,342

Can ship immediately

QTY UNIT PRICE
1:$1.43000
2500:$1.22691
5000:$1.18147

Product Specifications

TypeDescription
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.8 V @ 1 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:2 µA @ 1200 V
Capacitance @ Vr, F:69pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:TO-252
Operating Temperature - Junction:-55°C ~ 175°C

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