1N5811TR

Microsemi

DIODE GEN PURP 150V 6A AXIAL

Description
150 V 6A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V - Through Hole B, Axial - -65°C ~ 175°C

RoHS Compliant

1N5811TR Datasheet

In Stock: 214

Can ship immediately

QTY UNIT PRICE
1:$11.75000

Product Specifications

TypeDescription
Series:-
Package:Bag
Part Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):150 V
Current - Average Rectified (Io):6A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:5 µA @ 150 V
Capacitance @ Vr, F:-
Mounting Type:Through Hole
Package / Case:B, Axial
Supplier Device Package:-
Operating Temperature - Junction:-65°C ~ 175°C

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