UJ3D06504TS

UnitedSiC

650V 4A SIC SCHOTTKY DIODE G3, T

Description
650 V 4A (DC) 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 25 µA @ 650 V 118pF @ 1V, 1MHz Through Hole TO-220-2 TO-220-2 -55°C ~ 175°C

RoHS Compliant

UJ3D06504TS Datasheet

In Stock: 1,095

Can ship immediately

QTY UNIT PRICE
1:$1.95000

Product Specifications

TypeDescription
Series:Gen-III
Package:Tube
Part Status:Active
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):4A (DC)
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 4 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:25 µA @ 650 V
Capacitance @ Vr, F:118pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2
Operating Temperature - Junction:-55°C ~ 175°C

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