1N5811C.TR

Semtech

DIODE GEN PURP 150V 6A AXIAL

Description
150 V 6A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 5V, 1MHz Through Hole Axial Axial -65°C ~ 175°C

RoHS Compliant

1N5811C.TR Datasheet

In Stock: 1,106

Can ship immediately

QTY UNIT PRICE
1:$6.41000
500:$3.78792
1000:$3.19463

Product Specifications

TypeDescription
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):150 V
Current - Average Rectified (Io):6A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:5 µA @ 150 V
Capacitance @ Vr, F:60pF @ 5V, 1MHz
Mounting Type:Through Hole
Package / Case:Axial
Supplier Device Package:Axial
Operating Temperature - Junction:-65°C ~ 175°C

You May Interested

VS-1N1184RA
VS-1N1184RA
DIODE GEN PURP 100V 40A DO203AB
1N4007-E3/53
1N4007-E3/53
DIODE GEN PURP 1KV 1A DO204AL
MBR130LSFT1G
MBR130LSFT1G
DIODE SCHOTTKY 30V 1A SOD123L
M1MA141KT1G
M1MA141KT1G
DIODE GEN PURP 40V 100MA SC70-3
RJU60C2SDPD-E0#J2
RJU60C2SDPD-E0#J2
RECTIFIER, 1 PHASE, 5A, 600V, TO
KYW35K4
KYW35K4
DIODE STD D12.77X6.6W 400V 35A
UJ3D06560KSD
UJ3D06560KSD
650V 60A SIC SCHOTTKY DIODE G3,
HS1D
HS1D
1A -200V - SMA (DO-214AC) - RECT
MUR860G
MUR860G
DIODE GEN PURP 600V 8A TO220AC
BAS16LP-7
BAS16LP-7
DIODE GEN PURP 75V 200MA 2DFN
VS-C4PH3006LHN3
VS-C4PH3006LHN3
DIODE GEN PURP 600V 15A TO247AD
HS2DAL M3G
HS2DAL M3G
50NS, 2A, 200V, HIGH EFFICIENT R
Top