NSB8JT-E3/81

Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 600V 8A TO263AB

Description
600 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V 55pF @ 4V, 1MHz Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263AB -55°C ~ 150°C

RoHS Compliant

NSB8JT-E3/81 Datasheet

In Stock: 265

Can ship immediately

QTY UNIT PRICE
1:$1.11000
800:$0.67746
1600:$0.55025

Product Specifications

TypeDescription
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 8 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):-
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:55pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AB
Operating Temperature - Junction:-55°C ~ 150°C

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