UGB8JT-E3/81

Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 600V 8A TO263AB

Description
600 V 8A 1.75 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 30 µA @ 600 V - Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263AB -55°C ~ 150°C

RoHS Compliant

UGB8JT-E3/81 Datasheet

In Stock: 842

Can ship immediately

QTY UNIT PRICE
1:$1.63000
800:$0.99225
1600:$0.80592

Product Specifications

TypeDescription
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:30 µA @ 600 V
Capacitance @ Vr, F:-
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AB
Operating Temperature - Junction:-55°C ~ 150°C

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