Toshiba Electronic Devices and Storage Corporation
PB-F DIODE TO-220-2L V=650 IF=4A
RoHS Compliant
Can ship immediately
| QTY | UNIT PRICE |
| 1: | $2.53000 |
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| Diode Type: | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max): | 650 V |
| Current - Average Rectified (Io): | 4A (DC) |
| Voltage - Forward (Vf) (Max) @ If: | 1.6 V @ 4 A |
| Speed: | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr): | 0 ns |
| Current - Reverse Leakage @ Vr: | 20 µA @ 650 V |
| Capacitance @ Vr, F: | 16pF @ 650V, 1MHz |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-2 |
| Supplier Device Package: | TO-220-2L |
| Operating Temperature - Junction: | 175°C (Max) |
