NXPSC046506Q

WeEn Semiconductors Co., Ltd

DIODE SCHOTTKY 650V 4A TO220AC

Description
650 V 4A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 170 µA @ 650 V 130pF @ 1V, 1MHz Through Hole TO-220-2 TO-220AC 175°C (Max)

RoHS Compliant

NXPSC046506Q Datasheet

In Stock: 3,141

Can ship immediately

QTY UNIT PRICE
1:$2.60000

Product Specifications

TypeDescription
Series:-
Package:Tube
Part Status:Active
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 4 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:170 µA @ 650 V
Capacitance @ Vr, F:130pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220AC
Operating Temperature - Junction:175°C (Max)

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