WNSC401200CWQ

WeEn Semiconductors Co., Ltd

SILICON CARBIDE POWER DIODE

Description
1200 V 40A 1.75 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V 810pF @ 1V, 1MHz Through Hole TO-247-3 TO-247-3 175°C (Max)

RoHS Compliant

WNSC401200CWQ Datasheet

In Stock: 632

Can ship immediately

QTY UNIT PRICE
1:$16.17000

Product Specifications

TypeDescription
Series:-
Package:Tube
Part Status:Active
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):40A
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 20 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:200 µA @ 1200 V
Capacitance @ Vr, F:810pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
Operating Temperature - Junction:175°C (Max)

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