NXPSC16650B6J

WeEn Semiconductors Co., Ltd

SILICON CARBIDE POWER DIODE

Description
650 V 16A 1.7 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 534pF @ 1V, 1MHz Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 175°C (Max)

RoHS Compliant

NXPSC16650B6J Datasheet

In Stock: 3,370

Can ship immediately

QTY UNIT PRICE
1:$7.14000

Product Specifications

TypeDescription
Series:-
Package:Tube
Part Status:Active
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):16A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 16 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:100 µA @ 650 V
Capacitance @ Vr, F:534pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
Operating Temperature - Junction:175°C (Max)

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