WNSC08650T6J

WeEn Semiconductors Co., Ltd

SILICON CARBIDE POWER DIODE

Description
650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 267pF @ 1V, 1MHz Surface Mount 4-VDFN Exposed Pad 5-DFN (8x8) 175°C (Max)

RoHS Compliant

WNSC08650T6J Datasheet

In Stock: 3,197

Can ship immediately

QTY UNIT PRICE
1:$3.03000

Product Specifications

TypeDescription
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 8 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:50 µA @ 650 V
Capacitance @ Vr, F:267pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:4-VDFN Exposed Pad
Supplier Device Package:5-DFN (8x8)
Operating Temperature - Junction:175°C (Max)

You May Interested

RURU50100
RURU50100
RECTIFIER DIODE
FERD20H100SB-TR
FERD20H100SB-TR
DIODE RECT 100V 20A DPAK
NSRLL30XV2T5G
NSRLL30XV2T5G
SWITCHING DIODE, SOD523
A115DX11
A115DX11
RECTIFIER DIODE
SS10P6-M3/87A
SS10P6-M3/87A
DIODE SCHOTTKY 60V 7A TO277A
STPS30SM120SFP
STPS30SM120SFP
DIODE SCHOTTKY 120V TO220FPAB
MBRS360T3H
MBRS360T3H
RECTIFIER DIODE
IDB06S60C
IDB06S60C
RECTIFIER DIODE
VSS8D5M12HM3/I
VSS8D5M12HM3/I
5A, 120V, SLIMSMAW TRENCH SKY RE
VS-65EPS12LHM3
VS-65EPS12LHM3
DIODES - TO-247-E3
DHG20I1200PA
DHG20I1200PA
DIODE GEN PURP 1.2KV 20A TO220AC
1N4448WS-7-F
1N4448WS-7-F
DIODE GEN PURP 75V 250MA SOD323
Top