NXPSC08650X6Q

WeEn Semiconductors Co., Ltd

DIODE SCHOTTKY 650V 8A TO220F

Description
650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 230 µA @ 650 V 260pF @ 1V, 1MHz Through Hole TO-220-2 Full Pack, Isolated Tab TO-220F 175°C (Max)

RoHS Compliant

NXPSC08650X6Q Datasheet

In Stock: 3,160

Can ship immediately

QTY UNIT PRICE
1:$4.66000

Product Specifications

TypeDescription
Series:-
Package:Bulk
Part Status:Active
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 8 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:230 µA @ 650 V
Capacitance @ Vr, F:260pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack, Isolated Tab
Supplier Device Package:TO-220F
Operating Temperature - Junction:175°C (Max)

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