WNSC06650T6J

WeEn Semiconductors Co., Ltd

SILICON CARBIDE POWER DIODE

Description
650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 190pF @ 1V, 1MHz Surface Mount 4-VDFN Exposed Pad 5-DFN (8x8) 175°C (Max)

RoHS Compliant

WNSC06650T6J Datasheet

In Stock: 3,164

Can ship immediately

QTY UNIT PRICE
1:$2.76000

Product Specifications

TypeDescription
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):6A
Voltage - Forward (Vf) (Max) @ If:1.7 V @ 6 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:40 µA @ 650 V
Capacitance @ Vr, F:190pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:4-VDFN Exposed Pad
Supplier Device Package:5-DFN (8x8)
Operating Temperature - Junction:175°C (Max)

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