GB50MPS17-247

GeneSiC Semiconductor

SIC DIODE 1700V 50A TO-247-2

Description
1700 V 216A (DC) 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 1700 V 3193pF @ 1V, 1MHz Through Hole TO-247-2 TO-247-2 -55°C ~ 175°C

RoHS Compliant

GB50MPS17-247 Datasheet

In Stock: 947

Can ship immediately

QTY UNIT PRICE
1:$32.75000
10:$30.76634
30:$29.37707

Product Specifications

TypeDescription
Series:-
Package:Tube
Part Status:Active
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1700 V
Current - Average Rectified (Io):216A (DC)
Voltage - Forward (Vf) (Max) @ If:1.8 V @ 50 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:60 µA @ 1700 V
Capacitance @ Vr, F:3193pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-247-2
Supplier Device Package:TO-247-2
Operating Temperature - Junction:-55°C ~ 175°C

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