FGA25N120ANTDTU-F109

Sanyo Semiconductor/ON Semiconductor

IGBT 1200V 50A 312W TO3P

Description
1200 V 50 A 90 A 2.65V @ 15V, 50A 312 W 4.1mJ (on), 960µJ (off) Standard 200 nC 50ns/190ns 600V, 25A, 10Ohm, 15V 350 ns -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P

RoHS Compliant

FGA25N120ANTDTU-F109 Datasheet

In Stock: 545

Can ship immediately

QTY UNIT PRICE
1:$3.42000
10:$3.08459
450:$2.42308

Product Specifications

TypeDescription
Series:-
Package:Tube
Part Status:Active
IGBT Type:NPT and Trench
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):50 A
Current - Collector Pulsed (Icm):90 A
Vce(on) (Max) @ Vge, Ic:2.65V @ 15V, 50A
Power - Max:312 W
Switching Energy:4.1mJ (on), 960µJ (off)
Input Type:Standard
Gate Charge:200 nC
Td (on/off) @ 25°C:50ns/190ns
Test Condition:600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr):350 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3P-3, SC-65-3
Supplier Device Package:TO-3P

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