N0602N-S19-AY

Renesas Electronics America

MOSFET N-CH 60V 100A TO220-3

Description
MOSFET (Metal Oxide) 60 V 100A (Ta) 10V 4.6mOhm @ 50A, 10V - 133 nC @ 10 V ±20V 7730 pF @ 25 V - 1.5W (Ta), 156W (Tc) 150°C (TJ) Through Hole TO-220-3 TO-220-3 Isolated Tab

RoHS Compliant

N0602N-S19-AY Datasheet

In Stock: 2,177

Can ship immediately

QTY UNIT PRICE
1:$2.04000
2000:$2.04000

Product Specifications

TypeDescription
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:133 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7730 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.5W (Ta), 156W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3 Isolated Tab

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