G3R20MT12N

GeneSiC Semiconductor

SIC MOSFET N-CH 105A SOT227

Description
SiCFET (Silicon Carbide) 1200 V 105A (Tc) 15V 24mOhm @ 60A, 15V 2.69V @ 15mA 219 nC @ 15 V +20V, -10V 5873 pF @ 800 V - 365W (Tc) -55°C ~ 175°C (TJ) Chassis Mount SOT-227 SOT-227-4, miniBLOC

RoHS Compliant

G3R20MT12N Datasheet

In Stock: 260

Can ship immediately

QTY UNIT PRICE
1:$53.25000

Product Specifications

TypeDescription
Series:G3R™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:105A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:24mOhm @ 60A, 15V
Vgs(th) (Max) @ Id:2.69V @ 15mA
Gate Charge (Qg) (Max) @ Vgs:219 nC @ 15 V
Vgs (Max):+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds:5873 pF @ 800 V
FET Feature:-
Power Dissipation (Max):365W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227
Package / Case:SOT-227-4, miniBLOC

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