TPH3208LDG

Transphorm

GANFET N-CH 650V 20A 3PQFN

Description
GaNFET (Gallium Nitride) 650 V 20A (Tc) 10V 130mOhm @ 13A, 8V 2.6V @ 300µA 14 nC @ 8 V ±18V 760 pF @ 400 V - 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount 3-PQFN (8x8) 3-PowerDFN

RoHS Compliant

TPH3208LDG Datasheet

In Stock: 391

Can ship immediately

QTY UNIT PRICE
1:$10.81000
10:$9.72900
60:$8.86420

Product Specifications

TypeDescription
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 13A, 8V
Vgs(th) (Max) @ Id:2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 8 V
Vgs (Max):±18V
Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 400 V
FET Feature:-
Power Dissipation (Max):96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PQFN (8x8)
Package / Case:3-PowerDFN

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