BSZ040N04LSGATMA1

IR (Infineon Technologies)

MOSFET N-CH 40V 18A/40A 8TSDSON

Description
MOSFET (Metal Oxide) 40 V 18A (Ta), 40A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V 2V @ 36µA 64 nC @ 10 V ±20V 5100 pF @ 20 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount PG-TSDSON-8 8-PowerTDFN

RoHS Compliant

BSZ040N04LSGATMA1 Datasheet

In Stock: 55,676

Can ship immediately

QTY UNIT PRICE
1:$1.15000
5000:$0.48485
10000:$0.46663

Product Specifications

TypeDescription
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2V @ 36µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5100 pF @ 20 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8
Package / Case:8-PowerTDFN

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