FDS6676AS

Rochester Electronics

SMALL SIGNAL FIELD-EFFECT TRANSI

Description
MOSFET (Metal Oxide) 30 V 14.5A (Ta) 4.5V, 10V 6mOhm @ 14.5A, 10V 3V @ 1mA 63 nC @ 10 V ±20V 2.51 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC 8-SOIC (0.154", 3.90mm Width)

RoHS Compliant

FDS6676AS Datasheet

In Stock: 10,177

Can ship immediately

QTY UNIT PRICE
1:$0.49000
2500:$0.44956
5000:$0.42832

Product Specifications

TypeDescription
Series:PowerTrench®, SyncFET™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:14.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2.51 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)

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