G3R40MT12K

GeneSiC Semiconductor

SIC MOSFET N-CH 71A TO247-4

Description
SiCFET (Silicon Carbide) 1200 V 71A (Tc) 15V 48mOhm @ 35A, 15V 2.69V @ 10mA 106 nC @ 15 V ±15V 2929 pF @ 800 V - 333W (Tc) -55°C ~ 175°C (TJ) Through Hole TO-247-4 TO-247-4

RoHS Compliant

G3R40MT12K Datasheet

In Stock: 267

Can ship immediately

QTY UNIT PRICE
1:$18.10000

Product Specifications

TypeDescription
Series:G3R™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:71A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:48mOhm @ 35A, 15V
Vgs(th) (Max) @ Id:2.69V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:106 nC @ 15 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:2929 pF @ 800 V
FET Feature:-
Power Dissipation (Max):333W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-4
Package / Case:TO-247-4

You May Interested

IXTA76P10T-TRL
IXTA76P10T-TRL
MOSFET P-CH 100V 76A TO263
NTD50N03RG
NTD50N03RG
MOSFET N-CH 25V 7.8A/45A DPAK
TP2104K1-G
TP2104K1-G
MOSFET P-CH 40V 160MA TO236AB
SIHB33N60EF-GE3
SIHB33N60EF-GE3
MOSFET N-CH 600V 33A D2PAK
SCH2080KEC
SCH2080KEC
SICFET N-CH 1200V 40A TO247
MCU12P06-TP
MCU12P06-TP
MOSFET P-CH 60V 12A DPAK
FDD6776A
FDD6776A
MOSFET N-CH 25V 17.7A/30A DPAK
BSZ042N06NSATMA1
BSZ042N06NSATMA1
MOSFET N-CH 60V 17A/40A TSDSON
FDFMA2P853
FDFMA2P853
SMALL SIGNAL FIELD-EFFECT TRANSI
STF6N80K5
STF6N80K5
MOSFET N-CH 800V 4.5A TO220FP
TPN4R712MD,L1Q
TPN4R712MD,L1Q
MOSFET P-CH 20V 36A 8TSON
IRFB3806PBF
IRFB3806PBF
MOSFET N-CH 60V 43A TO220AB
Top