SIHP21N80AE-GE3

Vishay / Siliconix

MOSFET N-CH 800V 17.4A TO220AB

Description
MOSFET (Metal Oxide) 800 V 17.4A (Tc) 10V 235mOhm @ 11A, 10V 4V @ 250µA 72 nC @ 10 V ±30V 1388 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole TO-220AB TO-220-3

RoHS Compliant

SIHP21N80AE-GE3 Datasheet

In Stock: 1,124

Can ship immediately

QTY UNIT PRICE
1:$4.55000
10:$4.06378
100:$3.33191

Product Specifications

TypeDescription
Series:E
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:17.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:235mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1388 pF @ 100 V
FET Feature:-
Power Dissipation (Max):32W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3

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