TP65H035WS

Transphorm

GANFET N-CH 650V 46.5A TO247-3

Description
GaNFET (Cascode Gallium Nitride FET) 650 V 46.5A (Tc) 12V 41mOhm @ 30A, 10V 4.8V @ 1mA 36 nC @ 10 V ±20V 1500 pF @ 400 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3

RoHS Compliant

TP65H035WS Datasheet

In Stock: 281

Can ship immediately

QTY UNIT PRICE
1:$20.81000
10:$18.91818
30:$17.49950

Product Specifications

TypeDescription
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:46.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):12V
Rds On (Max) @ Id, Vgs:41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 400 V
FET Feature:-
Power Dissipation (Max):156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3

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