TP65H480G4JSG-TR

Transphorm

GANFET N-CH 650V 3.6A 3PQFN

Description
GaNFET (Gallium Nitride) 650 V 3.6A (Tc) 8V 560mOhm @ 3.4A, 8V 2.8V @ 500µA 8 V @ 8 nC ±18V 400 V @ 760 pF - 13.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount 3-PQFN (5x6) 3-SMD, Flat Lead

RoHS Compliant

TP65H480G4JSG-TR Datasheet

In Stock: 500

Can ship immediately

QTY UNIT PRICE
1:$3.70000

Product Specifications

TypeDescription
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V
Rds On (Max) @ Id, Vgs:560mOhm @ 3.4A, 8V
Vgs(th) (Max) @ Id:2.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:8 V @ 8 nC
Vgs (Max):±18V
Input Capacitance (Ciss) (Max) @ Vds:400 V @ 760 pF
FET Feature:-
Power Dissipation (Max):13.2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PQFN (5x6)
Package / Case:3-SMD, Flat Lead

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