BSP89H6327XTSA1

IR (Infineon Technologies)

MOSFET N-CH 240V 350MA SOT223-4

Description
MOSFET (Metal Oxide) 240 V 350mA (Ta) 4.5V, 10V 6Ohm @ 350mA, 10V 1.8V @ 108µA 6.4 nC @ 10 V ±20V 140 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount PG-SOT223-4 TO-261-4, TO-261AA

RoHS Compliant

BSP89H6327XTSA1 Datasheet

In Stock: 4,845

Can ship immediately

QTY UNIT PRICE
1:$0.66000
1000:$0.29220
2000:$0.26880

Product Specifications

TypeDescription
Series:SIPMOS®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):240 V
Current - Continuous Drain (Id) @ 25°C:350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 350mA, 10V
Vgs(th) (Max) @ Id:1.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs:6.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA

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