TP65H050WSQA

Transphorm

GANFET N-CH 650V 36A TO247-3

Description
GaNFET (Cascode Gallium Nitride FET) 650 V 36A (Tc) 10V 60mOhm @ 25A, 10V 4.8V @ 700µA 24 nC @ 10 V ±20V 1000 pF @ 400 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247-3

RoHS Compliant

TP65H050WSQA Datasheet

In Stock: 443

Can ship immediately

QTY UNIT PRICE
1:$19.01000

Product Specifications

TypeDescription
Series:Automotive, AEC-Q101
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 400 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3

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