GA10JT12-263

GeneSiC Semiconductor

TRANS SJT 1200V 25A

Description
SiC (Silicon Carbide Junction Transistor) 1200 V 25A (Tc) - 120mOhm @ 10A - - - 1403 pF @ 800 V - 170W (Tc) 175°C (TJ) Surface Mount - -

RoHS Compliant

GA10JT12-263 Datasheet

In Stock: 318

Can ship immediately

QTY UNIT PRICE
1:$20.74000
10:$18.85539
50:$17.44137

Product Specifications

TypeDescription
Series:-
Package:Tube
Part Status:Active
FET Type:-
Technology:SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:120mOhm @ 10A
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:1403 pF @ 800 V
FET Feature:-
Power Dissipation (Max):170W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:-
Package / Case:-

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