BSC16DN25NS3GATMA1

IR (Infineon Technologies)

MOSFET N-CH 250V 10.9A TDSON-8-5

Description
MOSFET (Metal Oxide) 250 V 10.9A (Tc) 10V 165mOhm @ 5.5A, 10V 4V @ 32µA 11.4 nC @ 10 V ±20V 920 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount PG-TDSON-8-5 8-PowerTDFN

RoHS Compliant

BSC16DN25NS3GATMA1 Datasheet

In Stock: 5,789

Can ship immediately

QTY UNIT PRICE
1:$1.93000
5000:$0.85166
10000:$0.83380

Product Specifications

TypeDescription
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:10.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:165mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4V @ 32µA
Gate Charge (Qg) (Max) @ Vgs:11.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:920 pF @ 100 V
FET Feature:-
Power Dissipation (Max):62.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-5
Package / Case:8-PowerTDFN

You May Interested

NTMFS4937NCT1G
NTMFS4937NCT1G
MOSFET N-CH 30V 10.2A 5DFN
MTD2N50E1
MTD2N50E1
TRANS MOSFET N-CH 500V 2A RAIL
NVD6824NLT4G
NVD6824NLT4G
MOSFET N-CH 100V 8.5A/41A DPAK
FQPF13N06L
FQPF13N06L
MOSFET N-CH 60V 10A TO220F
IPD14N06S2-80
IPD14N06S2-80
IPD14N06 - 55V-60V N-CHANNEL AUT
IPI126N10N3GXKSA1
IPI126N10N3GXKSA1
N-CHANNEL POWER MOSFET
IXTQ60N20L2
IXTQ60N20L2
MOSFET N-CH 200V 60A TO3P
NTB5426NT4G
NTB5426NT4G
MOSFET N-CH 60V 120A D2PAK
STH260N6F6-6
STH260N6F6-6
MOSFET N-CH 60V 180A H2PAK-6
MTB15N06V
MTB15N06V
N-CHANNEL POWER MOSFET
IRFR825PBF
IRFR825PBF
HEXFET N-CHANNEL POWER MOSFET
SQ2318AES-T1_BE3
SQ2318AES-T1_BE3
MOSFET N-CH 40V 8A SOT23-3
Top