NTE2399

NTE Electronics, Inc.

MOSFET N-CHANNEL 1KV 3.1A TO220

Description
MOSFET (Metal Oxide) 1 kV 3.1A (Tc) 10V 5Ohm @ 1.9A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 980 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole TO-220 TO-220-3

RoHS Compliant

NTE2399 Datasheet

In Stock: 432

Can ship immediately

QTY UNIT PRICE
1:$8.70000

Product Specifications

TypeDescription
Series:-
Package:Bag
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1 kV
Current - Continuous Drain (Id) @ 25°C:3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:980 pF @ 25 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3

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