SSM6J507NU,LF

Toshiba Electronic Devices and Storage Corporation

MOSFET P-CH 30V 10A 6UDFNB

Description
MOSFET (Metal Oxide) 30 V 10A (Ta) 4V, 10V 20mOhm @ 4A, 10V 2.2V @ 250µA 20.4 nC @ 4.5 V +20V, -25V 1150 pF @ 15 V - 1.25W (Ta) 150°C (TJ) Surface Mount 6-UDFNB (2x2) 6-WDFN Exposed Pad

RoHS Compliant

SSM6J507NU,LF Datasheet

In Stock: 33,345

Can ship immediately

QTY UNIT PRICE
1:$0.48000
3000:$0.16174
6000:$0.15130

Product Specifications

TypeDescription
Series:U-MOSVI
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:20mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20.4 nC @ 4.5 V
Vgs (Max):+20V, -25V
Input Capacitance (Ciss) (Max) @ Vds:1150 pF @ 15 V
FET Feature:-
Power Dissipation (Max):1.25W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-UDFNB (2x2)
Package / Case:6-WDFN Exposed Pad

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