G3R350MT12D

GeneSiC Semiconductor

SIC MOSFET N-CH 11A TO247-3

Description
SiCFET (Silicon Carbide) 1200 V 11A (Tc) 15V 420mOhm @ 4A, 15V 2.69V @ 2mA 12 nC @ 15 V ±15V 334 pF @ 800 V - 74W (Tc) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247-3

RoHS Compliant

G3R350MT12D Datasheet

In Stock: 1,270

Can ship immediately

QTY UNIT PRICE
1:$4.86000

Product Specifications

TypeDescription
Series:G3R™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:420mOhm @ 4A, 15V
Vgs(th) (Max) @ Id:2.69V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 15 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:334 pF @ 800 V
FET Feature:-
Power Dissipation (Max):74W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3

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