IRFD113PBF

Vishay / Siliconix

MOSFET N-CH 60V 800MA 4DIP

Description
MOSFET (Metal Oxide) 60 V 800mA (Tc) 10V 800mOhm @ 800mA, 10V 4V @ 250µA 7 nC @ 10 V ±20V 200 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole 4-DIP, Hexdip, HVMDIP 4-DIP (0.300", 7.62mm)

RoHS Compliant

IRFD113PBF Datasheet

In Stock: 1,817

Can ship immediately

QTY UNIT PRICE
1:$2.27000
10:$2.04775
100:$1.64551

Product Specifications

TypeDescription
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:800mOhm @ 800mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:4-DIP, Hexdip, HVMDIP
Package / Case:4-DIP (0.300", 7.62mm)

You May Interested

RD3P050SNFRATL
RD3P050SNFRATL
MOSFET N-CH 100V 5A TO252
IXFR64N60Q3
IXFR64N60Q3
MOSFET N-CH 600V 42A ISOPLUS247
NTS4101PT1H
NTS4101PT1H
PFET SC70 20V 1.37A 120MO
FQH18N50V2
FQH18N50V2
MOSFET N-CH 500V 20A TO247-3
IPP60R600P6XKSA1
IPP60R600P6XKSA1
MOSFET N-CH 600V 7.3A TO220-3
FDMC3612
FDMC3612
MOSFET N-CH 100V 3.3A/16A 8MLP
RFD14N06LSM9A
RFD14N06LSM9A
N-CHANNEL POWER MOSFET
APT56F50B2
APT56F50B2
MOSFET N-CH 500V 56A T-MAX
PMV450ENEAR
PMV450ENEAR
MOSFET N-CH 60V 800MA TO236AB
2SK3043
2SK3043
MOSFET N-CH 450V 5A TO220D-A1
FQP34N20
FQP34N20
MOSFET N-CH 200V 31A TO220-3
DMN90H8D5HCT
DMN90H8D5HCT
MOSFET N-CH 900V 2.5A TO220AB
Top