GA50JT12-247

GeneSiC Semiconductor

TRANS SJT 1200V 100A TO247AB

Description
SiC (Silicon Carbide Junction Transistor) 1200 V 100A (Tc) - 25mOhm @ 50A - - - 7209 pF @ 800 V - 583W (Tc) 175°C (TJ) Through Hole TO-247AB TO-247-3

RoHS Compliant

GA50JT12-247 Datasheet

In Stock: 135

Can ship immediately

QTY UNIT PRICE
1:$99.01000
10:$92.82342
30:$88.49198

Product Specifications

TypeDescription
Series:-
Package:Tube
Part Status:Obsolete
FET Type:-
Technology:SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:25mOhm @ 50A
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:7209 pF @ 800 V
FET Feature:-
Power Dissipation (Max):583W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AB
Package / Case:TO-247-3

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