NTE2386

NTE Electronics, Inc.

MOSFET N-CHANNEL 600V 6.2A TO3

Description
MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.4A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole TO-3 TO-204AA, TO-3

RoHS Compliant

NTE2386 Datasheet

In Stock: 374

Can ship immediately

QTY UNIT PRICE
1:$87.51000

Product Specifications

TypeDescription
Series:-
Package:Bag
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 3.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3
Package / Case:TO-204AA, TO-3

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