GA20JT12-263

GeneSiC Semiconductor

TRANS SJT 1200V 45A D2PAK

Description
SiC (Silicon Carbide Junction Transistor) 1200 V 45A (Tc) - 60mOhm @ 20A - - - 3091 pF @ 800 V - 282W (Tc) 175°C (TJ) Surface Mount D2PAK (7-Lead) TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

RoHS Compliant

GA20JT12-263 Datasheet

In Stock: 254

Can ship immediately

QTY UNIT PRICE
1:$38.13000
10:$35.26921
50:$32.40905

Product Specifications

TypeDescription
Series:-
Package:Tube
Part Status:Active
FET Type:-
Technology:SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:60mOhm @ 20A
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:3091 pF @ 800 V
FET Feature:-
Power Dissipation (Max):282W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK (7-Lead)
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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