STP13NM60ND

STMicroelectronics

MOSFET N-CH 600V 11A TO220

Description
MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 5V @ 250µA 24.5 nC @ 10 V ±25V 845 pF @ 50 V - 109W (Tc) -55°C ~ 150°C (TJ) Through Hole TO-220 TO-220-3

RoHS Compliant

STP13NM60ND Datasheet

In Stock: 225

Can ship immediately

QTY UNIT PRICE
1:$3.15000
50:$2.53374
100:$2.30859

Product Specifications

TypeDescription
Series:FDmesh™ II
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:845 pF @ 50 V
FET Feature:-
Power Dissipation (Max):109W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3

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