NTE2931

NTE Electronics, Inc.

MOSFET N-CH 200V 12.8A TO3PML

Description
MOSFET (Metal Oxide) 200 V 12.8A (Tc) 10V 180mOhm @ 6.4A, 40V 4V @ 250µA 58 nC @ 10 V ±30V 1500 pF @ 25 V - 73W (Tc) -55°C ~ 150°C (TJ) Through Hole TO-3PML TO-3P-3 Full Pack

RoHS Compliant

NTE2931 Datasheet

In Stock: 372

Can ship immediately

QTY UNIT PRICE
1:$6.06000

Product Specifications

TypeDescription
Series:-
Package:Bag
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:12.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 6.4A, 40V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:58 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 25 V
FET Feature:-
Power Dissipation (Max):73W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PML
Package / Case:TO-3P-3 Full Pack

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