TP90H050WS

Transphorm

GANFET N-CH 900V 34A TO247-3

Description
GaNFET (Cascode Gallium Nitride FET) 900 V 34A (Tc) 10V 63mOhm @ 22A, 10V 4.4V @ 700µA 17.5 nC @ 10 V ±20V 980 pF @ 600 V - 119W (Tc) -55°C ~ 150°C Through Hole TO-247-3 TO-247-3

RoHS Compliant

TP90H050WS Datasheet

In Stock: 435

Can ship immediately

QTY UNIT PRICE
1:$20.03000

Product Specifications

TypeDescription
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:34A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:63mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:4.4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:17.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:980 pF @ 600 V
FET Feature:-
Power Dissipation (Max):119W (Tc)
Operating Temperature:-55°C ~ 150°C
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3

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